Green Hydrogen And Grid-Scale Storage

Wide band gap semiconductor (WBG) devices such as GaN and Silicon Carbide are going to replace currently used silicon based power MOSFET and IGBT, due to their low conduction and switching losses. In other words use of these devices imply improvement in efficiency and power density (reduction in size). Though these improvements comes at the cost of fast switching dynamics that excites the circuit parasitic. This results in oscillation over voltages, EMI etc. One of the focus of our work is to understand the impact of parasitic and improve the circuit design to leverage the advantages of WBG devices.